Panasonic introduced six GaN transistors integrated single-chip inverter

Panasonic introduced six GaN transistors integrated single-chip inverter




Matsushita has developed a class by using GaN semiconductor transistor inverter IC, and in semiconductor manufacturing technology related to the International Society "2009 IEEEInternational Electron Devices Meeting (IEDM2009)" at being released. Papers said that this inverter IC can be used to drive motors. Inverter IC features excellent inverter conversion loss of 4.8%, and adoption of IGBT inverter circuit in the past, the conversion loss of 8.3% compared to a loss of a decrease of about 42% (20W output power pm).



With its high efficiency, and can be driven at a high temperature characteristics of the type used like GaN and SiC wide band gap (Wide BandGap) semiconductor power devices more and more attention. Earlier in the transistor and Schottky barrier diode (SBD) of the type of components on the level of development, is now integrated in the field seems to have come of age. Makes the transistors closer together between the integrated and therefore can be simply a shorter route, therefore, the transistor components embedded in the end with the board wire connections between components, when compared to reduce the parasitic inductance. Paper said, and IGBT power devices such as silicon-class compared to, GaN type device not only has a low on-resistance characteristics, but also through an integrated, after reducing parasitic inductance, but also to produce more high-speed switches.



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